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DG2001
New Product
Vishay Siliconix
Low-Voltage Single SPDT Analog Switch
FEATURES
D D D D D D D D D Low Voltage Operation (1.8 V to 5.5 V) Low On-Resistance - rON: 3 W Fast Switching - tON : 20 ns, tOFF: 10 ns Low Leakage - ICOM: 0.2-nA Low Charge Injection - QINJ: 5 pC Low Power Consumption TTL/CMOS Compatible ESD Protection > 2000 V (Method 3015.7) TSOP-6 Package
BENEFITS
D D D D Reduced Power Consumption Simple Logic Interface High Accuracy Reduce Board Space
APPLICATIONS
D D D D D Cellular Phones Communication Systems Portable Test Equipment Battery Operated Systems Sample and Hold Circuits
DESCRIPTION
The DG2001 is a single-pole/double-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low power, high speed, low on-resistance and small physical size, the DG2001 is ideal for portable and battery powered applications requiring high performance and efficient use of board space. The DG2001 is built on Vishay Siliconix's low voltage JI2 process. The DG2001 has a minimum 2000-V, ESD protection, per Method 3015.7. An epitaxial layer prevents latchup. Break-before-make is guaranteed.
The switch conducts equally well in both directions when on, and blocks up to the power supply level when off.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
TRUTH TABLE Logic
TSOP-6
IN V+ GND 1 2 3 Top View 6 5 4 NO (Source1) COM NC (Source2) 0 1
NC
ON OFF
NO
OFF ON
ORDERING INFORMATION Temp Range
-40 to 85C
Package
TSOP-6
Part Number
DG2001DV
Document Number: 71398 S-03281--Rev. B, 19-Mar-01
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DG2001
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Reference to GND V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +6 V IN, COM, NC, NOa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to (V+ + 0.3 V) Continuous Current (Any terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . "50 mA Peak Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "200 mA (Pulsed at 1 ms, 10% duty cycle) ESD (MIL-STD-883B, Method 3015.7) . . . . . . . . . . . . . . . . . . . . . . . . > 2000 V Storage Temperature (D Suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 125C Power Dissipation (Packages)b TSOP-6c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 570 mW Notes: a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 7.0 mW/_C above 25_C
New Product
SPECIFICATIONS (V+ = 2.0 V)
Test Conditions Otherwise Unless Specified Parameter Analog Switch
Analog Signal Ranged On-Resistance rON Flatnessd VNO, VNC, VCOM rON rON Flatness INO(off), INC(off) ICOM(off) Channel-On Leakage Current g ICOM(on) V+ = 1.8 V, VCOM = 1.0 V, INO, INC = 10 mA V+ = 1.8 V, VCOM = 0 to V+, INO, INC = 10 mA Full Room Full Room Room Full Room Full Room Full -300 -3.5 -300 -3.5 -350 -3.5 0 15 17 5 300 3.5 300 3.5 300 3.5 pA nA pA nA pA nA V+ 30 32 V
Limits
-40 to 85_C
Symbol
V+ = 2.0 V, "10%, VIN = 0.4 or 1.6 Ve
Tempa
Minb
Typc
Maxb
Unit
W
Switch Off Leakage Currentg
V+ = 2.2 V VNO, VNC = 0.5 V/1.5 V, VCOM = 1.5 V/0.5 V
V+ = 2.2 V, VNO, VNC = VCOM = 0.5 V/1.5 V
Digital Control
Input High Voltage Input Low Voltage Input Capacitance Input Current
VINH
Full Full Full VIN = 0 or V+ Full
1.6 0.4 4 1 1 V pF mA
VINL
Cin
IINL or IINH
Dynamic Characteristics
Turn-On Time Turn-Off Time Break-Before-Make Time Charge Injectiond Off-Isolationd Crosstalkd NO, NC Off Capacitancend Channel-On Capacitanced tON tOFF td QINJ OIRR XTALK CNO(off), CNC(off) CON CL = 1 nF, VGEN = 0 V, RGEN = 0 W RL = 50 W CL = 5 pF, f = 1 MHz W, VNO or VNC = 1.5 V, RL = 300 W, CL = 35 pF Room Full Room Full Room Room Room Room Room VIN = 0 or V+, f = 1 MHz Room 50 1 30 15 15 1 -71 -70 17 pF dB 10 pC 50 53 30 33 ns
Power Supply
Power Supply Range Power Supply Current Power Consumption V+ I+ PC VIN = 0 or V+ 1.8 0.01 2.20 1.0 2.2 V mA mW
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Document Number: 71398 S-03281--Rev. B, 19-Mar-01
DG2001
New Product
SPECIFICATIONS (V+ = 3 V)
Test Conditions Otherwise Unless Specified Parameter Analog Switch
Analog Signal Ranged On-Resistance rON Flatnessd VNO, VNC, VCOM rON rON Flatness INO(off), INC(off) ICOM(off) Channel-On Leakage Current g ICOM(on) V+ = 2.7 V, VCOM = 1.5 V, INO, INC = 10 mA V+ = 2.7 V VCOM = 0 to V+, INO, INC = 10 mA V+ = 3.3 V, VNO, VNC = 1 V/3 V VCOM = 3 V/1 V Full Room Full Room Room Full Room Full Room Full -400 -4.5 -400 -4.5 -450 -4.5 0 5 6 3 400 4.5 400 4.5 450 4.5 pA nA pA nA pA nA V+ 9.2 10.2 V
Vishay Siliconix
Limits
-40 to 85_C
Symbol
V+ = 3 V, "10%, VIN = 0.4 or 2.0 Ve
Tempa
Minb
Typc
Maxb
Unit
W
Switch Off Leakage
Current g
V+ = 3.3 V, VNO, VNC = VCOM = 1 V/3 V
Digital Control
Input High Voltage Input Low Voltage Input Capacitance Input Current
VINH
Full Full Full VIN = 0 or V+ Full
2 0.4 4 1 1 V pF mA
VINL
Cin
IINL or IINH
Dynamic Characteristics
Turn-On Time Turn-Off Time Break-Before-Make Time Charge Injectiond tON tOFF td QINJ OIRR XTALK CNO(off), CNC(off) CON CL = 1 nF, VGEN = 0 V, RGEN = 0 W RL = 50 W CL = 5 pF, f = 1 MHz W, VNO or VNC = 2.0 V, RL = 300 W, CL = 35 pF Room Full Room Full Room Room Room Room Room VIN = 0 or V+, f = 1 MHz Room 50 1 24 12 13 3 -71 -70 17 pF dB 10 pC 45 48 30 33 ns
Off-Isolationd Crosstalkd NO, NC Off Capacitanced Channel-On Capacitanced
Power Supply
Power Supply Range Power Supply Current Power Consumption V+ I+ PC VIN = 0 or V+ 2.7 0.01 3.3 1.0 3.3 V mA mW
Document Number: 71398 S-03281--Rev. B, 19-Mar-01
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3
DG2001
Vishay Siliconix
SPECIFICATIONS (V+ = 5 V)
Test Conditions Otherwise Unless Specified Parameter Analog Switch
Analog Signal Ranged On-Resistance rON Flatnessd VNO, VNC, VCOM rON rON Flatness INO(off), INC(off) ICOM(off) Channel-On Leakage Current g ICOM(on) V+ = 4.5 V, VCOM = 3 V, INO, INC = 10 mA V+ = 4.5 V, VCOM = 0 to V+, INO, INC = 10 mA Full Room Full Room Room Full Room Full Room Full -900 -5.5 -900 -5.5 -1000 -5.5 0 3 4 2 900 5.5 900 5.5 1000 5.5 pA nA pA pA nA V+ 7.0 8.0 V
New Product
Limits
-40 to 85_C
Symbol
V+ = 5 V, "10%, VIN = 0.8 or 2.4 Ve
Tempa
Minb
Typc
Maxb
Unit
W
Switch Off Leakage
Current g
V+ = 5.5 V VNO, VNC = 1 V/4.5 V, VCOM = 4.5 V/1 V
V+ = 5.5 V, VNO, VNC = VCOM = 1 V/4.5 V
Digital Control
Input High Voltage Input Low Voltage Input Capacitance Input Current
VINH
Full Full Full VIN = 0 or V+ Full
2.4 0.8 4 1 1 V pF mA
VINL
Cin
IINL or IINH
Dynamic Characteristics
Turn-On Time Turn-Off Time Break-Before-Make Time Charge Injectiond tON tOFF td QINJ OIRR XTALK CNO(off), CNC(off) CON CL = 1 nF, VGEN = 0 V, RGEN = 0 W RL = 50 W CL = 5 pF, f = 1 MHz W, VNO or VNC = 3 V, RL = 300 W, CL = 35 pF Room Full Room Full Room Room Room Room Room VIN = 0 or V+, f = 1 MHz Room 50 1 20 10 10 7 -71 -70 17 pF dB 10 pC 37 40 27 30 ns
Off-Isolationd Crosstalkd Source-Off Capacitanced Channel-On Capacitanced
Power Supply
Power Supply Range Power Supply Current Power Consumption Notes: a. b. c. d. e. f. Room = 25C, Full = as determined by the operating suffix. Typical values are for design aid only, not guaranteed nor subject to production testing. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. Guarantee by design, nor subjected to production test. VIN = input voltage to perform proper function. Guaranteed by 5-V leakage testing, not production tested. V+ I+ PC VIN = 0 or V+ 4.5 0.01 5.5 1.0 5.5 V mA mW
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Document Number: 71398 S-03281--Rev. B, 19-Mar-01
DG2001
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
rON vs. VCOM and Supply Voltage
9 8 rON - On-Resistance ( ) 7 6 5 4 3 2 1 0 0 1 2 3 4 5 VCOM - Analog Voltage (V) V+ = 5 V V+ = 3 V V+ = 2 V rON - On-Resistance ( ) 13 12 11 10 9 8 7 6 5 4 3 0 1 2 3 4 5 VCOM - Analog Voltage (V) 85_C -40_C 40_C 25_C 85_C 25_C -40_C V+ = 5 V V+ = 2 V
Vishay Siliconix
rON vs. Analog Voltage and Temperature
Supply Current vs. Temperature
10 V+ = 5 V VIN = 0 V I+ - Supply Current (nA) I+ - Supply Current (A) 1 1 mA 10 mA
Supply Current vs. Input Switching Frequency
100 mA
0.1
10 mA
0.01
1 mA
0.001 -60 -40 -20 0 20 40 60 80 100
0.1 mA 1 10 100 1k 10 k 100 k 1M 10 M
Temperature (_C)
Input Switching Frequency (Hz)
Leakage Current vs. Temperature
10000 V+ = 5.5 V 1000 Leakage Current (pA) ICOM(off) 100 ICOM(on) 10 ION(off)/INC(off) Leakage Current (pA) 200
Leakage vs. Analog Voltage
V+ = 5 V 100 0 -100 ICOM(off) -200 ICOM(on) -300 ION(off)/INC(off) -400
1 -60 -40 -20 0 20 40 60 80 100 Temperature (_C)
-500 0 1 2 3 4 5 VCOM, VNO, VNC, - Analog Voltage (V)
Document Number: 71398 S-03281--Rev. B, 19-Mar-01
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DG2001
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Switching Time vs. Temperature and Supply Voltage
35 30 tON, tOFF, - Switchint Time (ns) 25 20 15 10 5 0 -60 tON V+ = 3 V tON V+ = 5 V tOFF V+ = 2 V tON V+ = 2 V 10 0 LOSS -10 LOSS, OIRR, XTLAK (dB) -20 -30 -40 -50 -60 -70 -80 -90 -40 -20 0 20 40 60 80 100 100 K 1M 10 M Frequency (Hz) 100 M 1G Temperature (_C) V+ = 3 V RL = 50 W XTALK OIRR
Insertion Loss, Off-Isolation, Crosstalk vs. Frequency
tOFF V+ = 3 V
tOFF V+ = 5 V
Switching Threshold vs. Supply Voltage
Charge Injection vs. Analog Voltage
40 30 Q - Charge Injection (pC) 20 10 V+ = 3 V 0 -10 -20 -30 -40 V+ = 2 V V+ = 5 V
1.4 VT - Switchint Threshold (V) 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 1
Upper Threshold
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EEEEEEE EEEEEEE EEEEEEE EEEEEEE EEEEEEE EEEEEEE
Low Threshold 2 3 4 5 6 7 V+ - Supply Voltage (V)
1.6
0
1
2
3
4
5
6
VCOM - Analog Voltage (V)
Document Number: 71398 S-03281--Rev. B, 19-Mar-01
DG2001
New Product
TEST CIRCUITS
V+ Logic Input V+ Switch Input NO or NC IN Logic Input GND 0V CL (includes fixture and stray capacitance) VOUT + VCOM RL R L ) R ON Logic "1" = Switch On Logic input waveforms inverted for switches that have the opposite logic sense. RL 300 W CL 35 pF COM Switch Output VOUT 0.9 x VOUT Switch Output 0V tON tOFF 0V +3V 50%
Vishay Siliconix
tr t 20 ns tf t 20 ns
FIGURE 1. Switching Time
V+ Logic Input COM VO RL 300 W CL 35 pF 3V 0V tr <5 ns tf <5 ns
V+ VNO VNC NO NC IN GND
VNC = VNO VO Switch Output 0V
90%
tD
tD
CL (includes fixture and stray capacitance)
FIGURE 2. Break-Before-Make Interval
V+
Rgen + Vgen 3V
V+ NC or NO IN GND COM VOUT VOUT IN CL On
DVOUT
Off Q = DVOUT x CL
On
IN depends on switch configuration: input polarity determined by sense of switch.
FIGURE 3. Charge Injection
Document Number: 71398 S-03281--Rev. B, 19-Mar-01
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DG2001
Vishay Siliconix
TEST CIRCUITS
New Product
V+ 10 nF
V+ COM IN COM NC or NO Off Isolation + 20 log GND VNC NO VCOM 0V, 2.4 V
RL
Analyzer
FIGURE 4. Off-Isolation
V+ 10 nF
V+ COM Meter IN 0 V, 2.4 V NC or NO GND HP4192A Impedance Analyzer or Equivalent f = 1 MHz
FIGURE 5. Channel Off/On Capacitance
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Document Number: 71398 S-03281--Rev. B, 19-Mar-01

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